Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5:Ce single crystalline films
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Author list: Wantong K., Yawai N., Chewpraditkul W., Kucera M., Hanus M., Nikl M.
Publisher: Elsevier
Publication year: 2017
Journal: Journal of Crystal Growth (0022-0248)
Volume number: 468
Start page: 275
End page: 277
Number of pages: 3
ISSN: 0022-0248
eISSN: 1873-5002
Languages: English-Great Britain (EN-GB)
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Abstract
Luminescence and scintillation properties of Y2SiO5:Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with α - and γ- rays. At 662 keV γ- rays, the LY value of 12,410 ph/MeV obtained for YSO:Ce -LPE is lower than that of 20,150 ph/MeV for YSO:Ce -SC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV α- rays. The ratio of LY under excitation with α- and γ- rays (α/γ ratio) is determined. Dependence of LY on an amplifier shaping time (0.5–12 µs) is also measured. © 2017 Elsevier B.V.
Keywords
A1. Luminescence, A3. Liquid phase epitaxy, B1. Ce doping, B1. Y2SiO5:Ce, B2. Scintillator materials
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