Role of the radio frequency magnetron sputtered seed layer properties on ultrasonic spray pyrolyzed ZnO thin films

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Author listTomakin M., Onuk Z., Rujisamphan N., Shah S.I.

PublisherElsevier

Publication year2017

JournalThin Solid Films (0040-6090)

Volume number642

Start page163

End page168

Number of pages6

ISSN0040-6090

eISSN1879-2731

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85029821365&doi=10.1016%2fj.tsf.2017.09.039&partnerID=40&md5=11ff51e6509d240d6d322c8967d7fdd4

LanguagesEnglish-Great Britain (EN-GB)


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Abstract

Herein, we investigated structural and electrical properties of ultrasonic spray pyrolyzed ZnO thin films (ZnO(USP)) deposited on radio frequency sputtered ZnO nanocolumns (ZnO(Seed)) under various oxygen atmosphere on p-Si substrates. X-ray diffraction data of the samples showed that the samples had a hexagonal structure with a strong (002) preferred orientation. The grain size of ZnO(USP) samples prepared on the seed layer sputtered in 25% and 50% oxygen atmosphere decreased and surface morphology was nanopebbles. ZnO samples prepared on the seed layers exhibited sharp and predominant ultraviolet luminescence at approximately 380 nm. The current–voltage characteristics of the n-ZnO(USP)/n-ZnO(seed)/p-Si heterojunctions were significantly affected by the seed layer preparation conditions. Backward diode behavior was observed for the n-ZnO(USP)/n-ZnO(seed)/p-Si heterojunctions with high donor concentration, in which the seed layers prepared in 100% and 75% argon atmosphere. The carrier concentration value was decreased for the films with the seed layer, obtained at higher oxygen content in the sputtering atmosphere. © 2017 Elsevier B.V.


Keywords

HeterojunctionUltrasonic spray


Last updated on 2023-02-10 at 07:35