Effect of thick barrier in a gapped graphene Josephson junction
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Author list: Suwannasit T., Liewrian W.
Publisher: IOP Publishing
Publication year: 2017
Volume number: 901
Issue number: 1
ISSN: 1742-6588
eISSN: 1742-6596
Languages: English-Great Britain (EN-GB)
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Abstract
We study the Josephson effect in a gapped graphene-based superconductor/barrier/superconductor junction using the Dirac-Bogoliubov de Gennes (DBdG) equation for theoretical prediction. A massive gap of this regime is induced by fabricating a monolayer graphene on substrate-induced bandgap and superconductivity is acquired by the proximity effect of conventional superconductor (s-wave superconductor) through top gate electrodes. This Josephson junction is investigated in case of thick barrier limit that is pointed out the effect of applying a gate voltage VG in the barrier. We find that the switching supercurrent can be controlled by the gate VG and the effect of thick barrier can influence the switching linear curve. When the barrier is adjusted to manner of a potential well which is inside the range of , the supercurrent in the thick barrier case is examined to the same behavior as the thin barrier case. The controlling supercurrent through the electrostatic gate is suitable for alternative mechanism into experimental test. ฉ Published under licence by IOP Publishing Ltd.
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