Scintillation Characteristics of GAGG:Ce Single-Crystalline Films Grown by Liquid Phase Epitaxy
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Author list: Chewpraditkul W., Chewpraditkul W.R., Yawai N., Wantong K., Kucera M., Lucenicova Z., Nikl M.
Publisher: Institute of Electrical and Electronics Engineers
Publication year: 2018
Journal: IEEE Transactions on Nuclear Science (0018-9499)
Volume number: 65
Issue number: 8
Start page: 2132
End page: 2135
Number of pages: 4
ISSN: 0018-9499
eISSN: 1558-1578
Languages: English-Great Britain (EN-GB)
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Abstract
The Gd3(Al,Ga)5O12:Ce single-crystalline films were grown by a liquid phase epitaxy (LPE) technique from BaO-B2O3-BaF2 flux. The scintillation characteristics were investigated and compared to the bulk Gd3(Al2.7Ga2.3)O12:Ce single crystal (SC) grown by the Czochralski technique. The light yield (LY) and energy resolution were measured using an R6231 photomultiplier. At 5.5-MeV α -particles, the LY value of 7100 photons/MeV obtained for Gd3Al2.62Ga2.38O12:Ce-LPE sample is lower than that of 9310 photons/MeV for the Gd3(Al2.7Ga2.3)O12:Ce-SC sample, whereas an energy resolution of the LPE sample is better (5.9% versus 6.6%). The ratio of LY value under excitation with α - and γ -rays ( α/γ ratio) was also determined. Faster scintillation decay time and lower slow-component content were obtained for LPE samples with respect to Gd3(Al2.7Ga2.3)O12:Ce-SC one. © 1963-2012 IEEE.
Keywords
Gd3(Al,Ga)1O12:Ce, liquid phase epitaxy (LPE), single-crystalline films
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