Fabrication processes of soi structure for optical nonreciprocal devices
Conference proceedings article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Choowitsakunlert S., Takagiwa K., Kobashigawa T., Hosoya N., Silapunt R., Yokoi H.
Publisher: Trans Tech Publications
Publication year: 2018
Volume number: 777 KEM
Start page: 107
End page: 112
Number of pages: 6
ISBN: 9783035713718
ISSN: 1013-9826
eISSN: 1662-9795
Languages: English-Great Britain (EN-GB)
Abstract
Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce: YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce: YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding. ฉ 2018 Trans Tech Publications, Switzerland.
Keywords
Photosensitive adhesive bonding, Silicon-on-insulator (SOI), Surface activated bonding