Fabrication processes of soi structure for optical nonreciprocal devices

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Author listChoowitsakunlert S., Takagiwa K., Kobashigawa T., Hosoya N., Silapunt R., Yokoi H.

PublisherTrans Tech Publications

Publication year2018

Volume number777 KEM

Start page107

End page112

Number of pages6

ISBN9783035713718

ISSN1013-9826

eISSN1662-9795

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85054883079&doi=10.4028%2fwww.scientific.net%2fKEM.777.107&partnerID=40&md5=7982f9a8a1beaf640ad7e85b2e5bc8e4

LanguagesEnglish-Great Britain (EN-GB)


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Abstract

Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce: YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce: YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding. ฉ 2018 Trans Tech Publications, Switzerland.


Keywords

Photosensitive adhesive bondingSilicon-on-insulator (SOI)Surface activated bonding


Last updated on 2023-02-10 at 07:36