Oxygen partial pressure-dependent growth mechanism of low-dimensional zinc oxide on indium tin oxide glass
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Author list: Tuayjaroen R., Rattana T., Jutarosaga T.
Publisher: Elsevier
Publication year: 2019
Journal: Materials Science in Semiconductor Processing (1369-8001)
Volume number: 101
Start page: 116
End page: 123
Number of pages: 8
ISSN: 1369-8001
eISSN: 1873-4081
Languages: English-Great Britain (EN-GB)
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Abstract
The influence of O2 partial pressure on the growth mechanism of quasi-one-dimensional thermal-evaporated ZnO structure was explained by the preferential interface nucleation. At the relatively low temperature of 550 ฐC, the growth was governed by different growth mechanisms as the O2 partial pressure increased. At a very low O2 partial pressure of 0.3 Pa, the growth of ZnO nanowire on indium-tin oxide glass was Au-catalyzed vapor-liquid-solid (VLS) mechanism instead of vapor-solid (VS) mechanism. As increasing O2 partial pressure to 3 and 6 Pa, the ZnO needle-like structure was grown by self-catalyzed VLS mechanism. While, the VS mechanism was suggested for ZnO micropillar and two-dimensional ZnO sheet grown with the O2 partial pressure of 9 Pa and above. The near band edge (NBE) at 3.26 eV from the photoluminescence (PL) spectra strongly depended on the as-grown structure. In addition, PL at 2.32 eV corresponded to the ZnO defects due to the oxygen vacancies within 14 nm beneath the one-dimensional ZnO surface. ฉ 2019
Keywords
Indium tin oxide glass, Quasi-one-dimensional zinc oxide structure
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